Stable electroluminescence from reverse biased n-type porous silicon-aluminum Schottky junction device

被引:51
作者
Lazarouk, S [1 ]
Jaguiro, P [1 ]
Katsouba, S [1 ]
Masini, G [1 ]
LaMonica, S [1 ]
Maiello, G [1 ]
Ferrari, A [1 ]
机构
[1] UNIV ROMA LA SAPIENZA, INFM, UNITA ROMA, DIPARTIMENTO INGN ELETTRON, I-00184 ROME, ITALY
关键词
D O I
10.1063/1.115892
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the realization of a bright and stable electroluminescent Schottky diode based on aluminum-porous silicon junction. White light, visible in normal daylight, is emitted when a reverse bias is applied to the device, promoting the junction breakdown. The device has a fast (100 ns) rise time of the light emission. An excellent stability, tested over more than one month of continuous operation at a high bias level, is achieved by the complete encapsulation of the active porous silicon under a transparent alumina layer. The external power efficiency of light emission is 0.01%. (C) 1996 American Institute of Physics.
引用
收藏
页码:1646 / 1648
页数:3
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