Stable electroluminescence from reverse biased n-type porous silicon-aluminum Schottky junction device

被引：51

作者：

Lazarouk, S ^{[1
]}

Jaguiro, P ^{[1
]}

Katsouba, S ^{[1
]}

Masini, G ^{[1
]}

LaMonica, S ^{[1
]}

Maiello, G ^{[1
]}

Ferrari, A ^{[1
]}

机构：

[1] UNIV ROMA LA SAPIENZA, INFM, UNITA ROMA, DIPARTIMENTO INGN ELETTRON, I-00184 ROME, ITALY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.115892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of a bright and stable electroluminescent Schottky diode based on aluminum-porous silicon junction. White light, visible in normal daylight, is emitted when a reverse bias is applied to the device, promoting the junction breakdown. The device has a fast (100 ns) rise time of the light emission. An excellent stability, tested over more than one month of continuous operation at a high bias level, is achieved by the complete encapsulation of the active porous silicon under a transparent alumina layer. The external power efficiency of light emission is 0.01%. (C) 1996 American Institute of Physics.

引用

页码：1646 / 1648

页数：3

共 10 条

[1] POROUS SILICON OBTAINED BY ANODIZATION IN THE TRANSITION REGIME [J].

BERTOLOTTI, M ;

FAZIO, E ;

FERRARI, A ;

LAMONICA, S ;

LAZAROUK, S ;

LIAKHOU, G ;

MAIELLO, G ;

PROVERBIO, E ;

SCHIRONE, L ;

CARASSITI, F .

THIN SOLID FILMS, 1995, 255 (1-2) :152-154

[2]

BINDER M, 1995, E MRS S STRASB MAY

[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1956, 102 (02) :369-376

[4] LIGHT-EMITTING DEVICES IN INDUSTRIAL CMOS TECHNOLOGY [J].

KRAMER, J ;

SEITZ, P ;

STEIGMEIER, EF ;

AUDERSET, H ;

DELLEY, B ;

BALTES, H .

SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :527-533

[5] ANISOTROPY OF POROUS ANODIZATION OF ALUMINUM FOR VLSI TECHNOLOGY [J].

LAZAROUK, S ;

BARANOV, I ;

MAIELLO, G ;

PROVERBIO, E ;

DECESARE, G ;

FERRARI, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (09) :2556-2559

[6]

LAZAROUK S, 1995, MATER RES SOC SYMP P, V358, P659

[7] HIGH QUANTUM EFFICIENCY FOR A POROUS SILICON LIGHT-EMITTING DIODE UNDER PULSED OPERATION [J].

LINNROS, J ;

LALIC, N .

APPLIED PHYSICS LETTERS, 1995, 66 (22) :3048-3050

[8] ELECTROLUMINESCENT POROUS SILICON DEVICE WITH AN EXTERNAL QUANTUM EFFICIENCY GREATER-THAN 0.1-PERCENT UNDER CW OPERATION [J].

LONI, A ;

SIMONS, AJ ;

COX, TI ;

CALCOTT, PDJ ;

CANHAM, LT .

ELECTRONICS LETTERS, 1995, 31 (15) :1288-1289

[9] VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J].

NEWMAN, R .

PHYSICAL REVIEW, 1955, 100 (02) :700-703

[10] LIGHT-EMITTING POROUS SILICON DIODE WITH AN INCREASED ELECTROLUMINESCENCE QUANTUM EFFICIENCY [J].

STEINER, P ;

KOZLOWSKI, F ;

LANG, W .

APPLIED PHYSICS LETTERS, 1993, 62 (21) :2700-2702

← 1 →