ELECTROLUMINESCENT POROUS SILICON DEVICE WITH AN EXTERNAL QUANTUM EFFICIENCY GREATER-THAN 0.1-PERCENT UNDER CW OPERATION

被引：157

作者：

LONI, A

SIMONS, AJ

COX, TI

CALCOTT, PDJ

CANHAM, LT

机构：

[1] Defence Research Agency, Worcesterhire, WR 14 3PS, St. Andrew's Road, Great Malvern

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 15期

关键词：

ELECTROLUMINESCENCE; ELECTROLUMINESCENT DEVICES; POROUS SILICON;

D O I：

10.1049/el:19950831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report an all solid state, VLSI compatible, electroluminescent device based on porous silicon with an external quantum efficiency greater than 0.1% under CW operation. The emission, which is broadband and peaks at 600nm, is detected above a low threshold current density and voltage of 0.01 Am-2 and 2.3V, respectively.

引用

页码：1288 / 1289

页数：2

共 6 条

[1]

BADOZ P, 1994, 185TH P EL SOC M CA, P569

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].