POROUS SILICON LIGHT-EMITTING P-N-JUNCTION

被引：16

作者：

LANG, W

STEINER, P

KOZLOWSKI, F

SANDMAIER, H

机构：

[1] Fraunhofer-Institute for Solid State Technology, 80686 Munich

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90127-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The fabrication and properties of a light-emitting porous silicon device incorporating a p-n junction are presented. By means of a selective anodization of a sandwich of p(+) on n-substrate, a nanoporous recombination region within the pn junction is formed. The device shows rectifying characteristics with a considerable series resistance. When driven under forward bias, the diode emits light with linear dependence on the current. The measured external quantum efficiency is of the order of 10(-2)%. The internal quantum efficiency should be at least one order of magnitude higher.

引用

页码：169 / 173

页数：5

共 21 条

[1]

BASSOUS E, 1991, MATER RES SOC S P, V256, P23

[2] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].