VISIBLE ELECTROLUMINESCENCE FROM P-TYPE CRYSTALLINE SILICON POROUS SILICON N-TYPE MICROCRYSTALLINE SILICON CARBON PN JUNCTION DIODES

被引：53

作者：

FUTAGI, T

MATSUMOTO, T

KATSUNO, M

OHTA, Y

MIMURA, H

KITAMURA, K

机构：

[1] Electronics Research Laboratories, Nippon Steel Corporation, Nakahara-ku, Kawasaki, 211

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5B期

关键词：

POROUS SI; MU-C-SIC; PN JUNCTION; ELECTROLUMINESCENCE; DIODE;

D O I：

10.1143/JJAP.31.L616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated p-type crystalline silicon/porous silicon/microcrystalline silicon carbon pn junction diodes and demonstrated current-induced visible light emission. We observed two kinds of electroluminescence; one was a weak white emission at a forward current of about 90 mA, and the other was a strong orange-red one at a forward current from about 200 to 619 mA.

引用

页码：L616 / L618

页数：3

共 14 条

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