AN AMORPHOUS SIC THIN-FILM VISIBLE LIGHT-EMITTING DIODE WITH A MU-C-SIC-H ELECTRON INJECTOR

We have prepared mu-c-SiC:H films with high dark conductivities (10(-3)-1 S/cm) and wide optical band gaps (2.1 - 2.4 eV) at a higher gas pressure (around 5mTorr) than that for conventional electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD), with suppression of hydrogen ions impinging on an underlying layer. We have also applied them to a-SiC:H based thin film (TF) light-emitting diodes (LEDs) as electron injectors and obtained the emission over the whole range of visible spectrum from 400 to 780 nm. For a-SiC TF-LEDs, it is the first time that the emission in shorter wavelengths (400-500 nm) has been observed, and it is considered that the improvement of the interface due to the reduction of the process-induced damage during the deposition of mu-c-SiC:H causes an effective injection of electrons.