EFFICIENT VISIBLE PHOTOLUMINESCENCE FROM POROUS SILICON

被引:139
作者
KOSHIDA, N
KOYAMA, H
机构
[1] Division of Electronic and Information Engineering, Tokyo University of Agriculture and Technology, Tokyo, 184, Koganei
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 7B期
关键词
POROUS SILICON; ELECTROCHEMICAL ANODIZATION; VISIBLE PHOTOLUMINESCENCE; GAP WIDENING; DIRECT TRANSITION; QUANTUM WIRE EFFECTS; SI-H; MICROSTRUCTURE; OXIDATION; SURFACE; LAYER; FILM;
D O I
10.1143/JJAP.30.L1221
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is shown that UV-excited porous Si (PS) exhibits an efficient visible photoluminescence (PL) at room temperature. The PS layers were formed by anodization of p-type and n-type single-crystal Si wafers in aqueous HF solutions. The peak wavelength of PL spectra depends on the anodization parameters including the resistivity and the conduction type of Si substrates. The PL spectra can be tuned to a higher energy side by either adjustment of the anodizing conditions or chemical etching after anodization. These remarkable results can be interpreted as a result of quantum size effects in PS.
引用
收藏
页码:L1221 / L1223
页数:3
相关论文
共 28 条
[1]   FORMATION AND PROPERTIES OF POROUS SILICON FILM [J].
ARITA, Y ;
SUNOHARA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :285-295
[2]   DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION [J].
BARLA, K ;
HERINO, R ;
BOMCHIL, G ;
PFISTER, JC ;
FREUND, A .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :727-732
[3]   AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636
[4]   POROUS SILICON - THE MATERIAL AND ITS APPLICATIONS IN SILICON ON INSULATOR TECHNOLOGIES [J].
BOMCHIL, G ;
HALIMAOUI, A ;
HERINO, R .
APPLIED SURFACE SCIENCE, 1989, 41-2 :604-613
[5]   PORE-SIZE DISTRIBUTION IN POROUS SILICON STUDIED BY ADSORPTION-ISOTHERMS [J].
BOMCHIL, G ;
HERINO, R ;
BARLA, K ;
PFISTER, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1611-1614
[6]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[7]   EFFECTS OF POLYSILANE FORMATION ON THE OPTICAL AND ELECTRICAL-PROPERTIES OF BINARY SI-H ALLOYS [J].
FURUKAWA, S ;
MATSUMOTO, N .
PHYSICAL REVIEW B, 1985, 31 (04) :2114-2120
[8]   QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J].
FURUKAWA, S ;
MIYASATO, T .
PHYSICAL REVIEW B, 1988, 38 (08) :5726-5729
[9]   POROUS SILICON FILMS - PREPARATION AND EXAMINATION WITH SURFACE AND OPTICAL METHODS [J].
HARDEMAN, RW ;
BEALE, MIJ ;
GASSON, DB ;
KEEN, JM ;
PICKERING, C ;
ROBBINS, DJ .
SURFACE SCIENCE, 1985, 152 (APR) :1051-1062
[10]   NICKEL PLATING ON POROUS SILICON [J].
HERINO, R ;
JAN, P ;
BOMCHIL, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) :2513-2514