POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT

被引：1609

作者：

LEHMANN, V

GOSELE, U

机构：

[1] School of Engineering, Duke University, Durham

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.104512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous silicon layers grown on nondegenerated p-type silicon electrodes in hydrofluoric acid electrolytes are translucent for visible light, which is equivalent to an increased band gap compared to bulk silicon. It will be shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band-gap energy but may also be the key to better understanding the dissolution mechanism that leads to porous silicon formation.

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收藏

页码：856 / 858

页数：3

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