QUANTUM ELECTRON DEVICES

[1] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES [J]. ELECTRONICS LETTERS, 1988, 24 (18) : 1190 - 1191

[2] NEGATIVE TRANSCONDUCTANCE VIA GATING OF THE QUANTUM WELL SUBBANDS IN A RESONANT TUNNELING TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 219 - 221

[3] OBSERVATION OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN A FET WITH STRUCTURED GATE [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1987, 67 (04): : 449 - 452

[4] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[5] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1545 - 1547

[6] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J]. APPLIED PHYSICS LETTERS, 1989, 55 (17) : 1777 - 1779

[7] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[8] QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2065 - 2082

[9] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[10] CAPASSO F, 1990, PHYSICS QUANTUM ELEC

[1] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES [J]. ELECTRONICS LETTERS, 1988, 24 (18) : 1190 - 1191

[2] NEGATIVE TRANSCONDUCTANCE VIA GATING OF THE QUANTUM WELL SUBBANDS IN A RESONANT TUNNELING TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 219 - 221

[3] OBSERVATION OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN A FET WITH STRUCTURED GATE [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1987, 67 (04): : 449 - 452

[4] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[5] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1545 - 1547

[6] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J]. APPLIED PHYSICS LETTERS, 1989, 55 (17) : 1777 - 1779

[7] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[8] QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2065 - 2082

[9] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[10] CAPASSO F, 1990, PHYSICS QUANTUM ELEC