LIGHT-EMITTING DEVICES IN INDUSTRIAL CMOS TECHNOLOGY

被引：95

作者：

KRAMER, J ^{[1
]}

SEITZ, P ^{[1
]}

STEIGMEIER, EF ^{[1
]}

AUDERSET, H ^{[1
]}

DELLEY, B ^{[1
]}

BALTES, H ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,PHYS ELECTR LAB,CH-8092 ZURICH,SWITZERLAND

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1993年 / 37-8卷

关键词：

D O I：

10.1016/0924-4247(93)80091-T

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two different unmodified industrial CMOS processes have been used for the integration of highly interdigitated pn structures. Under forward bias these pn junctions emit narrow-band infrared light at 1160 nm with an electrical-to-optical power conversion efficiency of typically 10(-4). The same junctions show broad-band visible-light emission between 450 and 800 nm in the avalanche breakdown region under reverse bias with efficiencies of the order of 10(-8). This is already enough for a first few practical applications as light-emitting devices (LEDs). No satisfactory explanation for this emission effect, fitting all the experimentally observed electro-optical and physical properties of our silicon LEDs, has been found yet.

引用

页码：527 / 533

页数：7

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