LIGHT-EMITTING DEVICES IN INDUSTRIAL CMOS TECHNOLOGY

被引：96

作者：

KRAMER, J ^{[1
]}

SEITZ, P ^{[1
]}

STEIGMEIER, EF ^{[1
]}

AUDERSET, H ^{[1
]}

DELLEY, B ^{[1
]}

BALTES, H ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,PHYS ELECTR LAB,CH-8092 ZURICH,SWITZERLAND

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1993年 / 37-8卷

关键词：

D O I：

10.1016/0924-4247(93)80091-T

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two different unmodified industrial CMOS processes have been used for the integration of highly interdigitated pn structures. Under forward bias these pn junctions emit narrow-band infrared light at 1160 nm with an electrical-to-optical power conversion efficiency of typically 10(-4). The same junctions show broad-band visible-light emission between 450 and 800 nm in the avalanche breakdown region under reverse bias with efficiencies of the order of 10(-8). This is already enough for a first few practical applications as light-emitting devices (LEDs). No satisfactory explanation for this emission effect, fitting all the experimentally observed electro-optical and physical properties of our silicon LEDs, has been found yet.

引用

页码：527 / 533

页数：7

共 15 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1956, 102 (02) :369-376

[3] RECOMBINATION RADIATION FROM SILICON UNDER STRONG-FIELD CONDITIONS [J].

DAVIES, LW ;

STORM, AR .

PHYSICAL REVIEW, 1961, 121 (02) :381-+

[4]

DELLEY B, 1992, B AM PHYS SOC, V37, P719

[5]

Figielski T., 1962, P INT C PHYS SEMICON, P863

[6] INFRARED RADIATION FROM BREAKDOWN PLASMAS IN SI, GASB, AND GE - EVIDENCE FOR DIRECT FREE HOLE RADIATION [J].

HAECKER, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01) :301-310

[7] RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN SILICON [J].

HAYNES, JR ;

WESTPHAL, WC .

PHYSICAL REVIEW, 1956, 101 (06) :1676-1678

[8] QUANTITATIVE EMISSION MICROSCOPY [J].

KOLZER, J ;

BOIT, C ;

DALLMANN, A ;

DEBOY, G ;

OTTO, J ;

WEINMANN, D .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :R23-R41

[9] INDUSTRIAL CMOS TECHNOLOGY FOR THE INTEGRATION OF OPTICAL METROLOGY SYSTEMS (PHOTO-ASICS) [J].

KRAMER, J ;

SEITZ, P ;

BALTES, H .

SENSORS AND ACTUATORS A-PHYSICAL, 1992, 34 (01) :21-30

[10] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].

LEHMANN, V ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858

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