QUANTITATIVE EMISSION MICROSCOPY

被引:72
作者
KOLZER, J
BOIT, C
DALLMANN, A
DEBOY, G
OTTO, J
WEINMANN, D
机构
[1] IBM SIEMENS,IBM E FISHKILL,64M DRAM DEV PROJECT,HOPEWELL JCT,NY 12533
[2] SIEMENS AG,SEMICOND GRP,W-8000 MUNICH 83,GERMANY
[3] TECH UNIV MUNICH,DEPT PHYS E16,W-8046 GARCHING,GERMANY
关键词
D O I
10.1063/1.350466
中图分类号
O59 [应用物理学];
学科分类号
摘要
Emission microscopy has now become established as an effective technique in terms of reliability physics of industrial semiconductors. This convenient method allows chip verification and failure analysis to be carried out in many applications. Besides this, emission microscopy provides a technique for use in device engineering and the optimization of test structures. The key to using this technique to permit a more sophisticated quantitative analysis lies in a unique assignment of the light emission to the defect mechanism. Since the corresponding phenomena are numerous and their details are not fully clarified in all cases, further investigation is still required before this technique can be used routinely in a quantitative rather than qualitative approach. Some quantitative aspects of emission microscopy with respect to fundamental studies will therefore be outlined in this article, and the applicability of such practical guidelines will be illustrated. This provides the fundamentals for a comprehensive evaluation of the potential applications and degree of informativeness of this advanced method of failure analysis.
引用
收藏
页码:R23 / R41
页数:19
相关论文
共 53 条
[1]  
AOKI T, 1989, P IEEE IEDM 89, P281
[2]  
Boit C., 1990, 28th Annual Proceedings. Reliability Physics 1990 (Cat. No.90CH2787-0), P81, DOI 10.1109/RELPHY.1990.66066
[3]  
BOIT C, 1990, P CERT 90, P110
[4]   DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J].
BRORSON, SD ;
DIMARIA, DJ ;
FISCHETTI, MV ;
PESAVENTO, FL ;
SOLOMON, PM ;
DONG, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1302-1313
[5]  
CHIANG CL, 1986, P IEEE IEDM 86, P672
[6]  
CHIANG CL, 1990, P VLSI INT ED WORKSH
[7]   EVIDENCE OF OPTICAL-GENERATION OF MINORITY-CARRIERS FROM SATURATED MOS-TRANSISTORS [J].
CHILDS, PA ;
STUART, RA ;
ECCLESTON, W .
SOLID-STATE ELECTRONICS, 1983, 26 (07) :685-688
[8]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1956, 102 (02) :369-376
[9]  
DALLMANN A, 1990, 1ST P EUR S REL EL D, P69
[10]   VISIBLE-LIGHT EMISSION FROM SILICON MOSFETS [J].
DAS, NC ;
KHOKLE, WS ;
MOHANTY, SD .
SOLID-STATE ELECTRONICS, 1985, 28 (10) :967-&