VISIBLE-LIGHT EMISSION FROM SILICON MOSFETS

被引：9

作者：

DAS, NC

KHOKLE, WS

MOHANTY, SD

机构：

[1] UTKAL UNIV,DEPT PHYS,BHUBANESWAR 751004,ORISSA,INDIA

[2] CENT ELECTRON ENGN RES INST,DIV SOLID STATE DEVICES,PILANI,INDIA

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 10期

关键词：

D O I：

10.1016/0038-1101(85)90027-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：967 / &

共 18 条

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[9] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J].

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