INFRARED RADIATION FROM BREAKDOWN PLASMAS IN SI, GASB, AND GE - EVIDENCE FOR DIRECT FREE HOLE RADIATION

被引：59

作者：

HAECKER, W ^{[1
]}

机构：

[1] UNIV STUTTGART,PHYS KAL INST,STUTTGART,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1002/pssa.2210250129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：301 / 310

页数：10

共 25 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].

ANDERSON, CL ;

CROWELL, CR .

PHYSICAL REVIEW B, 1972, 5 (06) :2267-&

[2] MAXIMUM ANISOTROPY APPROXIMATION FOR CALCULATING ELECTRON DISTRIBUTIONS - APPLICATION TO HIGH FIELD TRANSPORT IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1964, 133 (1A) :A26-A33

[3] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[4]

BETZLER K, 1974, THESIS STUTTGART

[5] ELECTROLUMINESCENCE IN LIQUID-PHASE EPITAXIAL GASB DIODES [J].

BLOM, GM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) :1057-&

[6] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN GERMANIUM PARA-NORMAL JUNCTIONS [J].

CHYNOWETH, AG ;

GUMMEL, HK .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) :191-&

[7] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1956, 102 (02) :369-376

[8]

CHYNOWETH AG, 1968, SEMICONDUCTORS SEMIM, V4

[9]

CONWELL EM, 1964, PHYS REV, V135, P1138

[10] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

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