ELECTROLUMINESCENCE IN LIQUID-PHASE EPITAXIAL GASB DIODES

被引:11
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BLOM, GM
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10.1063/1.1660142
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O59 [应用物理学];
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页码:1057 / &
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共 15 条
[1]   ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J].
ARCHER, RJ ;
LEITE, RC ;
YARIV, A ;
PORTO, SPS ;
WHELAN, JM .
PHYSICAL REVIEW LETTERS, 1963, 10 (11) :483-&
[2]   ELECTRON MOBILITY IN GASB AT 77 DEGREES K [J].
BAXTER, RD ;
REID, FJ ;
BEER, AC .
PHYSICAL REVIEW, 1967, 162 (03) :718-&
[3]  
BLOM GM, 1969, THESIS UTRECHT
[4]   INJECTION ELECTROLUMINESCENCE IN GALLIUM ANTIMONIDE [J].
CALAWA, AR .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1660-&
[5]   RADIATIVE TUNNELING IN GAAS ABRUPT ASYMMETRICAL JUNCTIONS [J].
CASEY, HC ;
SILVERSMITH, DJ .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :241-+
[6]   ETUDE DE LEFFET LASER DANS DES JONCTIONS DANTIMONIURE DE GALLIUM [J].
CHIPAUX, C ;
EYMARD, R .
PHYSICA STATUS SOLIDI, 1965, 10 (01) :165-&
[7]   EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].
CHYNOWETH, A ;
LOGAN, RA ;
FELDMANN, WL .
PHYSICAL REVIEW, 1961, 121 (03) :684-&
[8]   RADIATIVE RECOMBINATION EFFECTS IN GASB DIODES AT HIGH CURRENT DENSITIES [J].
DEUTSCH, T ;
ELLIS, RC ;
WARSCHAUER, DM .
PHYSICA STATUS SOLIDI, 1963, 3 (06) :1001-1005
[9]  
DURAFFOURG G, 1965, THESIS PARIS
[10]  
JOHNSON EJ, 1962, P INT C PHYS SEMICON, P375