MAXIMUM ANISOTROPY APPROXIMATION FOR CALCULATING ELECTRON DISTRIBUTIONS - APPLICATION TO HIGH FIELD TRANSPORT IN SEMICONDUCTORS

被引：127

作者：

BARAFF, GA

机构：

来源：

PHYSICAL REVIEW | 1964年 / 133卷 / 1A期

关键词：

D O I：

10.1103/PhysRev.133.A26

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A26 / A33

页数：8

共 10 条

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[5]

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[6]

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[7]

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[8]

MURRAY RL, 1957, NUCLEAR REACTOR PHYS

[9] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

[10] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

WOLFF, PA .

PHYSICAL REVIEW, 1954, 95 (06) :1415-1420