RECOMBINATION RADIATION FROM SILICON UNDER STRONG-FIELD CONDITIONS

[1] BOK J, 1960, SOLID STATE PHYSIC 1, V1, P475

[2] RECOMBINATION RADIATION FROM HOT ELECTRONS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (01) : 11 - 12

[3] DAVIES LW, RIP

[4] NUCLEAR POLARIZATION VIA HOT CONDUCTION ELECTRONS [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (03) : 135 - 137

[5] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P211

[6] RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1676 - 1678

[7] NEW RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1866 - 1868

[8] ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 392 - 396

[9] HAYNES JR, PRIV COMMUNICATIONS

[10] HERLET A, 1955, Z ANGEW PHYS, V7, P149

[1] BOK J, 1960, SOLID STATE PHYSIC 1, V1, P475

[2] RECOMBINATION RADIATION FROM HOT ELECTRONS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (01) : 11 - 12

[3] DAVIES LW, RIP

[4] NUCLEAR POLARIZATION VIA HOT CONDUCTION ELECTRONS [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (03) : 135 - 137

[5] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P211

[6] RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1676 - 1678

[7] NEW RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1866 - 1868

[8] ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 392 - 396

[9] HAYNES JR, PRIV COMMUNICATIONS

[10] HERLET A, 1955, Z ANGEW PHYS, V7, P149