LIGHT-EMITTING POROUS SILICON DIODE WITH AN INCREASED ELECTROLUMINESCENCE QUANTUM EFFICIENCY

被引：147

作者：

STEINER, P

KOZLOWSKI, F

LANG, W

机构：

[1] Fraunhofer Institute for Solid State Technology, 8000 München 21

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期

关键词：

Electroluminescence - Fabrication - Performance - Porous materials - Quantum electronics - Semiconducting silicon;

D O I：

10.1063/1.109236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication technology and the properties of a light-emitting device including a porous pn junction are presented. We employ the selective formation of different kinds of porous silicon substructures caused by the doping level and the illumination during anodization. The device has a nanoporous light-emitting n layer between a mesoporous p+-doped capping layer and the macroporous n substrate. The pn junction formed in this way has strong rectifying characteristics. It shows bright red-orange light emission under forward bias. Compared to simple metal-porous silicon devices, the structure has an increased quantum efficiency (factor 10-100).

引用

页码：2700 / 2702

页数：3

共 13 条

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