Muonium formation via electron transport in silicon

被引：45

作者：

Storchak, V

Cox, SFJ

Cottrell, SP

Brewer, JH

Morris, GD

Arseneau, DJ

Hitti, B

机构：

[1] RUTHERFORD APPLETON LAB,CHILTON OX11 0QX,OXON,ENGLAND

[2] UNIV LONDON UNIV COLL,DEPT PHYS & ASTRON,LONDON WC1E 6BT,ENGLAND

[3] UNIV BRITISH COLUMBIA,CANADIAN INST ADV RES,VANCOUVER,BC V6T 1Z1,CANADA

[4] UNIV BRITISH COLUMBIA,DEPT PHYS & ASTRON,VANCOUVER,BC V6T 1Z1,CANADA

[5] TRIUMF,VANCOUVER,BC V6T 2A3,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.78.2835

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report muon spin rotation measurements in n-type silicon from 10 to 310 K in electric fields up to 5 kV/cm. These experiments reveal the nature of the partition of neutral muonium centers into normal muonium (Mu(T)(0)) and anomalous muonium (Mu(BC)(0)): Formation of Mu(T)(0) is consistent with epithermal processes prior to thermalization, while Mu(BC)(0) is formed via electron transport to a thermalized positive muon. The spatial distribution of the excess electrons created in the mu(+) ionization track is shown to be anisotropic with respect to the muon.

引用

页码：2835 / 2838

页数：4

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