A structure study of the electroless deposition of Au on Si(111):H

被引:40
作者
Warren, S
Reitzle, A
Kazimirov, A
Ziegler, JC
Bunk, O
Cao, LX
Renner, FU
Kolb, DM
Bedzyk, MJ
Zegenhagen, J
机构
[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[2] Univ Ulm, Abt Elektrochem, D-89069 Ulm, Germany
[3] Cornell Univ, Wilson Lab, CHESS, Ithaca, NY 14853 USA
[4] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany
[5] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[6] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[7] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
关键词
electrochemical methods; X-ray standing waves; X-ray scattering; diffraction; and reflection; epitaxy; gold; silicon; single crystal surfaces; solid-liquid interfaces;
D O I
10.1016/S0039-6028(01)01589-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electroless deposition of gold in monolayer amounts on hydrogen terminated Si(111) was studied by a variety of structure sensitive techniques. Rutherford back scattering data revealed a linear relationship between the An coverage and the concentration of the An solution used for deposition. Atomic force microscopy and surface X-ray diffraction studies indicated cluster formation, with the Au(111) face epitaxially aligned to the Si(111):H substrate. However, Xray standing wave experiments at coverage below one monolayer suggested the formation of a gold layer. Both clusters and isolated An atoms appear to be present at all coverages, which is explained by the formation of type of Au 'wetting layer', in addition to cluster formation which increases as the coverage increases. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:287 / 298
页数:12
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