Au/H:Si(111)-(1x1) interface versus Au/Si(111)-(7x7)

被引：37

作者：

Grupp, C ^{[1
]}

Taleb-Ibrahimi, A ^{[1
]}

机构：

[1] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.57.6258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The room-temperature growth of gold on Si(111) surfaces has been directly compared for nonreconstructed hydro en-terminated surfaces and the bare 7x7-reconstructed surface by means of high-resolution core-level and valence-band photoelectron spectroscopy and Auger spectroscopy. The growth modes show strong differences with gold island formation on the passivated H:Si(111)-(1x1) surface. Silicon segregated on top of the deposited gold film is seen for both interfaces. The Schottky barrier is only weakly affected by the hydrogen termination.

引用

页码：6258 / 6261

页数：4

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