LOW-TEMPERATURE HETEROEPITAXY OF INP ON SI(111) SUBSTRATES TREATED WITH BUFFERED HF SOLUTION

Low temperature metalorganic vapor phase heteroepitaxy of InP on Si(111) using buffered HF solutions for preparation of the Si surface is reported. X-ray photoelectron spectroscopy analysis showed no presence of chemisorbed contaminants on the substrate surface after surface preparation. We used high-resolution x-ray diffraction to characterize the quality of the InP epilayers. Optimum InP layers were obtained when the surface was treated with a buffered HF solution with a pH of 6.2, which produces the minimum substrate surface roughness, as reported in the literature. The InP layers grown on normally oriented Si(111) show the presence of large antiphase domains.© 1995 American Institute of Physics.