LP-MOVPE GROWTH OF ANTIPHASE DOMAIN FREE INP ON (001) SI USING LOW-TEMPERATURE PROCESSING

被引：5

作者：

GRUNDMANN, M

KROST, A

BIMBERG, D

机构：

[1] Institut für Festkörperphysik, Technische Universität Berlin, D-1000 Berlin 12

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90509-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

页码：494 / 495

页数：2

共 5 条

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[2] HETERO-EPITAXIAL GROWTH OF INP ON SI SUBSTRATES BY LP-MOVPE [J].

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KAWAI, Y ;

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[3] GROWTH AND CHARACTERIZATION OF INP/GAAS EPILAYERS ON SI SUBSTRATES BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].

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HUANG, KC ;

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YU, KY .

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[4] EPITAXIAL-GROWTH OF INP ON SI BY OMVPE DEFECT REDUCTION IN EPITAXIAL INP USING INASXP1-X/INP SUPERLATTICES [J].

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KOBA, M .

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[5] GROWTH OF ANTIPHASE-DOMAIN-FREE GAP ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

SUGO, M ;

YAMAMOTO, A ;

YAMAGUCHI, M .

JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) :229-235

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