The unsaturated photocurrent controlled by two-dimensional barrier geometry of a single ZnO nanowire Schottky photodiode

被引：34

作者：

Cheng, Gang ^{[1
,2
]}

Li, Zhaohan ^{[1
]}

Wang, Shujie ^{[1
]}

Gong, Hechun ^{[1
]}

Cheng, Ke ^{[1
]}

Jiang, Xiaohong ^{[1
]}

Zhou, Shaomin ^{[1
]}

Du, Zuliang ^{[1
]}

Cui, Tian ^{[2
]}

Zou, Guangtian ^{[2
]}

机构：

[1] Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China

[2] Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2989129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the I-V curve of a single ZnO nanowire assembled by dielectrophoresis was measured, which indicated that a back-to-back Schottky barrier structure was formed. Under ultraviolet light illumination, the photocurrent of the ZnO nanowire Schottky photodiode was unsaturated, and its differential conductivity increased with the increase of bias. A two-dimensional Schottky barrier geometry model was introduced to describe the separation of photogenerated electron-hole pairs in the depletion layer, which can well explain the unsaturated photocurrent property. In addition, the corresponding photocurrent equation was obtained, which was in good agreement with the experimental results. (C) 2008 American Institute of Physics.

引用

页数：3

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