GaN and related materials for device applications

被引：42

作者：

Pearton, SJ ^{[1
]}

Kuo, CP ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,DIV OPTOELECT,SAN JOSE,CA 95131

来源：

MRS BULLETIN | 1997年 / 22卷 / 02期

关键词：

D O I：

10.1557/S0883769400032516

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：17 / 21

页数：5

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