ELECTRICAL AND STRUCTURAL-PROPERTIES OF INXGA1-XN ON GAAS

被引：35

作者：

ABERNATHY, CR

MACKENZIE, JD

BHARATAN, SR

JONES, KS

PEARTON, SJ

机构：

[1] Department of Materials Science and Engineering, University of Florida, Gainesville

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 13期

关键词：

D O I：

10.1063/1.113875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xN (x=0.07-1.0) layers were grown on GaAs substrates by metalorganic molecular beam epitaxy. The films display strong n-type conductivity (n>1020cm-3) for a wide range of compositions. The use of an H2 rather than a He carrier gas produces a lower carrier concentration in the as-grown material. The InxGa1-xN is single crystal at low Ga concentrations with the lattice mismatch accommodated by a high density of stacking faults and microtwins. The InN layers contain only the cubic phase, while the ternaries contain both cubic and hexagonal phases.

引用

页码：1632 / 1634

页数：3

共 13 条

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