Field emission of doped carbon nanotubes

被引:42
作者
Ahn, HS
Lee, KR [1 ]
Kim, DY
Han, SW
机构
[1] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[2] Ewha Womans Univ, Div Nano Sci, Seoul 120750, South Korea
[3] Korea Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
[4] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
基金
新加坡国家研究基金会;
关键词
D O I
10.1063/1.2180444
中图分类号
O59 [应用物理学];
学科分类号
摘要
We calculated field-emission currents from nitrogen- and boron-doped single-walled (5,5) carbon nanotubes by integrating time-dependent Schrodinger equations. Nitrogen doping increased the emission current owing to a shift in the energy level of a localized state to the Fermi level, and the creation of coupled states that have characteristics of both localized and extended states. On the other hand, boron doping had an opposite effect on the electronic structure by increasing the energy level of the localized state. The calculated emission currents of the boron-doped carbon nanotube fluctuated depending on the doping site and the external electric field. (c) 2006 American Institute of Physics.
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页数:3
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