Recent progress in SiC microwave MESFETs

被引：17

作者：

Allen, ST ^{[1
]}

Sheppard, ST ^{[1
]}

Pribble, WL ^{[1
]}

Sadler, RA ^{[1
]}

Alcorn, TS ^{[1
]}

Ring, Z ^{[1
]}

Palmour, JW ^{[1
]}

机构：

[1] Cree Res Inc, Durham, NC 27703 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 | 1999年 / 572卷

关键词：

D O I：

10.1557/PROC-572-15

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.

引用

页码：15 / 22

页数：8

共 4 条

[1] MONTE-CARLO CALCULATIONS OF THE TEMPERATURE-DEPENDENT AND FIELD-DEPENDENT ELECTRON-TRANSPORT PARAMETERS FOR 4H-SIC [J].