Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region

被引：86

作者：

Ramakrishnan, A ^{[1
]}

Steinle, G ^{[1
]}

Supper, D ^{[1
]}

Degen, C ^{[1
]}

Ebbinghaus, G ^{[1
]}

机构：

[1] Infineon Technol AG, D-81730 Munich, Germany

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 07期

关键词：

D O I：

10.1049/el:20020226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report an electrically pumped MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting singlemode at 1293 nm with record characteristics, Continuous wave output power at room temperature with 1.4 mW, a threshold current of 1.25 mA and a data transmission rate of 10 Gbit/s has been realised.

引用

页码：322 / 324

页数：3

共 7 条

[1] Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy) [J].