Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm

被引：164

作者：

Höhnsdorf, F ^{[1
]}

Koch, J

Leu, S

Stolz, W

Borchert, B

Druminski, M

机构：

[1] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[2] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[3] Siemens AG, Corp Technol, D-81730 Munich, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 07期

关键词：

D O I：

10.1049/el:19990421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(GaIn)(NAs)/GaAs single quantum well (SQW) broad area lasers with emission wavelengths at 1.28 and 1.38 mu m at room temperature on GaAs substrates have been realised by applying optimised low-temperature metal organic vapour phase epitaxy (MOVPE) using the group V sources 1,1-dimethylhydrazine (UDMHS) in combination with tertiarybutylarsine (TBAs). Record-low threshold current densities of 0.8 and 2.2kA/cm(2), together with high differential efficiencies of 0.18 and 0.16W/A per facet, are obtained for 800 mu m long broad area lasers emitting at 1.28 and 1.38 mu m. respectively.

引用

收藏

页码：571 / 572

页数：2

相关论文

共 10 条

[1] Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy) [J].

Höhnsdorf, F ;

Koch, J ;

Agert, C ;

Stolz, W .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :391-396

[2] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730

[3] Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Nakatsuka, S ;

Kitatani, T ;

Yazawa, Y ;

Okai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11) :5711-5713

[4] Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane [J].

Leu, S ;

Protzmann, H ;

Höhnsdorf, F ;

Stolz, W ;

Steinkirchner, J ;

Hufgard, E .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :91-97

[5] C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs [J].

Leu, S ;

Höhnsdorf, F ;

Stolz, W ;

Becker, R ;

Salzmann, A ;

Greiling, A .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :98-104

[6] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].

Nakahara, K ;

Kondow, M ;

Kitatani, T ;

Larson, MC ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488

[7] Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes [J].

Sato, S ;

Satoh, S .

JOURNAL OF CRYSTAL GROWTH, 1998, 192 (3-4) :381-385

[8] Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition [J].

Sato, S ;

Satoh, S .

ELECTRONICS LETTERS, 1998, 34 (15) :1495-1497

[9]

SATO S, 1998, IEEE 16 INT SEM LAS

[10] Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition [J].

Sato, SI ;

Osawa, Y ;

Saitoh, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A) :2671-2675