Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition

被引：25

作者：

Sato, S ^{[1
]}

Satoh, S ^{[1
]}

机构：

[1] Ricoh Co Ltd, Gen Elect Res & Dev Ctr, Natori, Miyagi 9811241, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 15期

关键词：

D O I：

10.1049/el:19981034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A strained GaInNAs/GaAs double quantum-well laser is developed by metal organic chemical vapour deposition. Almost 1.2 mu m at room-temperature under pulsed operation is demonstrated. The threshold current density is lower than that of a laser with a GaInNAs bulk active layer.

引用

页码：1495 / 1497

页数：3

共 7 条

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