共 34 条
- [5] HIGASHI T, 1996, 9 M IEEE LAS EL OPT, P10
- [6] HETEROEPITAXIAL GROWTH OF GAN1-XPX (X-LESS-THAN-OR-EQUAL-TO-0.09) ON SAPPHIRE SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12A): : 3791 - 3793
- [10] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1056 - L1058