GaInNAs: A novel material for long-wavelength semiconductor lasers

被引:469
作者
Kondow, M
Kitatani, T
Nakatsuka, S
Larson, MC
Nakahara, K
Yazawa, Y
Okai, M
Uomi, K
机构
[1] RWCP Optoelectronics Hitachi Lab., c/o Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
[2] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
[3] Osaka University, Osaka
[4] Central Research Laboratory, Hitachi, Ltd.
[5] University of Tsukuba, Ibaraki
[6] Hitachi Research Laboratory, Hitachi Ltd.
[7] Tokyo Institute of Technology, Tokyo
[8] Central Research Laboratory, Hitachi Ltd., Tokyo
关键词
GaInNAs; high-temperature performance; optical fiber communications; quantum well; semiconductor laser;
D O I
10.1109/2944.640627
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 mu m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can be suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSEL's) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T-0 = 126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 mu m.
引用
收藏
页码:719 / 730
页数:12
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