LOW-THRESHOLD, WAFER FUSED LONG-WAVELENGTH VERTICAL-CAVITY LASERS

被引：93

作者：

DUDLEY, JJ

BABIC, DI

MIRIN, R

YANG, L

MILLER, BI

RAM, RJ

REYNOLDS, T

HU, EL

BOWERS, JE

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.111913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate electrically injected InGaAsP (1.3 mum) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The technique of wafer fusion allows for integration of GaAs/AlAs mirrors with InP double heterostructures without degradation of device performance, despite a 3.7% lattice mismatch between the wafers, The wafer fused VCLs have the lowest threshold current (9 mA) and lowest threshold current density (9.5 kA/cm2) and the highest characteristic temperature (T0=67 K) reported to date of any room-temperature long wavelength VCL.

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页码：1463 / 1465

页数：3

相关论文

共 12 条

[1]

BABA T, 1993, QUANTUM OPTOELECTRON

[2] EFFICIENT VERTICAL-CAVITY LASERS [J].

COLDREN, LA ;

GEELS, RS ;

CORZINE, SW ;

SCOTT, JW .

OPTICAL AND QUANTUM ELECTRONICS, 1992, 24 (02) :S105-S119

[3] 144-DEGREES-C OPERATION OF 1.3 MU-M INGAASP VERTICAL CAVITY LASERS ON GAAS SUBSTRATES [J].

DUDLEY, JJ ;

ISHIKAWA, M ;

BABIC, DI ;

MILLER, BI ;

MIRIN, R ;

JIANG, WB ;

BOWERS, JE ;

HU, EL .

APPLIED PHYSICS LETTERS, 1992, 61 (26) :3095-3097

[4] GAINASP/INP SEMICONDUCTOR MULTILAYER REFLECTOR GRWON BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND ITS APPLICATION TO SURFACE EMITTING LASER DIODE [J].

IMAJO, Y ;

KASUKAWA, A ;

KASHIWA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07) :L1130-L1132

[5] WAFER FUSION - A NOVEL TECHNIQUE FOR OPTOELECTRONIC DEVICE FABRICATION AND MONOLITHIC INTEGRATION [J].

LIAU, ZL ;

MULL, DE .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :737-739

[6] SEMICONDUCTOR-LASERS ON SI SUBSTRATES USING THE TECHNOLOGY OF BONDING BY ATOMIC REARRANGEMENT [J].

LO, YH ;

BHAT, R ;

HWANG, DM ;

CHUA, C ;

LIN, CH .

APPLIED PHYSICS LETTERS, 1993, 62 (10) :1038-1040

[7] BONDING BY ATOMIC REARRANGEMENT OF INP/INGAASP 1.5-MU-M WAVELENGTH LASERS ON GAAS SUBSTRATES [J].

LO, YH ;

BHAT, R ;

HWANG, DM ;

KOZA, MA ;

LEE, TP .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :1961-1963

[8] ANALYSIS OF WATER FUSING FOR 1.3 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

RAM, RJ ;

YANG, L ;

NAUKA, K ;

HOUNG, YM ;

LUDOWISE, M ;

MARS, DE ;

DUDLEY, JJ ;

WANG, SY .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2474-2476

[9] MODELING TEMPERATURE EFFECTS AND SPATIAL HOLE-BURNING TO OPTIMIZE VERTICAL-CAVITY SURFACE-EMITTING LASER PERFORMANCE [J].

SCOTT, JW ;

GEELS, RS ;

CORZINE, SW ;

COLDREN, LA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (05) :1295-1308

[10] ROOM-TEMPERATURE PULSED OPERATION OF 1.5 MU-M GAINASP/INP VERTICAL-CAVITY SURFACE-EMITTING LASER [J].

TADOKORO, T ;

OKAMOTO, H ;

KOHAMA, Y ;

KAWAKAMI, T ;

KUROKAWA, T .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) :409-411