ROOM-TEMPERATURE PULSED OPERATION OF 1.5 MU-M GAINASP/INP VERTICAL-CAVITY SURFACE-EMITTING LASER

被引:35
作者
TADOKORO, T
OKAMOTO, H
KOHAMA, Y
KAWAKAMI, T
KUROKAWA, T
机构
[1] NTT Opto-electronics Laboratories, Kanagawa
关键词
D O I
10.1109/68.136468
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Room temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55-mu-m is reported. A double heterostructure with a 34-pair GaInAsP (lambda(g) = 1.4-mu-m)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40-mu-m-phi-device with a 0.88-mu-m-thick active layer. Threshold current density is as low as 21 kA/cm2 at room temperature.
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页码:409 / 411
页数:3
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