共 10 条
- [1] CHAO FS, 1991, IEEE PHOTONIC TECH L, V3, P697
- [2] SUBMILLIAMP THRESHOLD VERTICAL-CAVITY LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1990, 57 (16) : 1605 - 1607
- [3] HASNAIN G, 1990, LEOS 90
- [4] BURIED HETEROSTRUCTURE GAAS/GAALAS DISTRIBUTED BRAGG REFLECTOR SURFACE EMITTING LASER WITH VERY LOW THRESHOLD (5.2 MA) UNDER ROOM-TEMPERATURE CW CONDITIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L667 - L668
- [5] SURFACE EMITTING SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) : 1845 - 1855
- [6] GAINASP/INP SEMICONDUCTOR MULTILAYER REFLECTOR GRWON BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND ITS APPLICATION TO SURFACE EMITTING LASER DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07): : L1130 - L1132
- [8] KASUKAWA A, 1990, 48TH DRC
- [10] WADA H, 1991, 49TH DRC