ROOM-TEMPERATURE PULSED OPERATION OF 1.5 MU-M GAINASP/INP VERTICAL-CAVITY SURFACE-EMITTING LASER

Room temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55-mu-m is reported. A double heterostructure with a 34-pair GaInAsP (lambda(g) = 1.4-mu-m)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40-mu-m-phi-device with a 0.88-mu-m-thick active layer. Threshold current density is as low as 21 kA/cm2 at room temperature.