Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes

被引:42
作者
Kitatani, T [1 ]
Kondow, M [1 ]
Nakatsuka, S [1 ]
Yazawa, Y [1 ]
Okai, M [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,RWCP,OPTOELECT HITACHI LAB,KOKUBUNJI,TOKYO 185,JAPAN
关键词
GaInNAs; high-temperature performance; optical fiber communication; quantum-well lasers; semiconductor lasers;
D O I
10.1109/2944.605657
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have succeeded in demonstrating continuous-wave (CW) operation of GaInNAs-GaAs single-quantum-well (SQW) laser diodes st room temperature (RT). The threshold current density was about 1.4 kA/cm(2), and the operating wavelength was approximately 1.18 mu m far a broad-stripe,geometry. Evenly spaced multiple longitudinal modes were clearly observed in the lasing spectrum, The full-angle-half-power far-field beam divergence measured parallel and perpendicular to the junction plane was 4.5 degrees and 45 degrees, respectively. A high characteristic temperature (T-0) of 126 K under CW operation and a small wavelength shift per ambient temperature change of 0.48 nm/degrees C under pulsed operation were obtained, These experimental results indicate the applicability of GaInNAs to long-wavelength laser diodes with excellent high-temperature performance.
引用
收藏
页码:206 / 209
页数:4
相关论文
共 8 条
  • [1] HIGASHI T, 1996, P LEOS 96 BOST MA, P10
  • [2] Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
    Kondow, M
    Uomi, K
    Kitatani, T
    Watahiki, S
    Yazawa, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 175 - 179
  • [3] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
    Kondow, M
    Uomi, K
    Niwa, A
    Kitatani, T
    Watahiki, S
    Yazawa, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1273 - 1275
  • [4] KONDOW M, IN PRESS ELECT LETT
  • [5] KONDOW M, 1996, P MRS J S, P42
  • [6] Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser
    Nakahara, K
    Kondow, K
    Kitatani, T
    Yazawa, Y
    Uomi, K
    [J]. ELECTRONICS LETTERS, 1996, 32 (17) : 1585 - 1586
  • [7] FABRICATION OF IN0.25GA0.75AS/INGAASP STRAINED SWQ LASERS ON IN0.05GA0.95AS TERNARY SUBSTRATE
    SHOJI, H
    UCHIDA, T
    KUSUNOKI, T
    MATSUDA, M
    KURAKAKE, H
    YAMAZAKI, S
    NAKAJIMA, K
    ISHIKAWA, H
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (10) : 1170 - 1172
  • [8] HIGH-PERFORMANCE UNCOOLED 1.3-MU-M ALXGAYIN1-X-YAS/INP STRAINED-LAYER QUANTUM-WELL LASERS FOR SUBSCRIBER LOOP APPLICATIONS
    ZAH, CE
    BHAT, R
    PATHAK, BN
    FAVIRE, F
    LIN, W
    WANG, MC
    ANDREADAKIS, NC
    HWANG, DM
    KOZA, MA
    LEE, TP
    WANG, Z
    DARBY, D
    FLANDERS, D
    HSIEH, JJ
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 511 - 523