FABRICATION OF IN0.25GA0.75AS/INGAASP STRAINED SWQ LASERS ON IN0.05GA0.95AS TERNARY SUBSTRATE

A uniform In0.05Ga0.95As ternary substrate was grown by using liquid encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material at a constant temperature, and InGaAs/InGaAsP strained single quantum well (SQW) lasers were fabricated on the substrate for the first time. The lasers lased at 1.03 mum and exhibited low threshold current density of 222 A/cm2 and excellent characteristic temperature of 221 K, showing that the ternary substrate has a sufficient quality for laser fabrication.