GROWTH OF TERNARY INXGA1-XAS BULK CRYSTALS WITH A UNIFORM COMPOSITION THROUGH SUPPLY OF GAAS

Ternary In0.14Ga0.86As bulk crystals with a uniform composition were found to be grown at a constant temperature by continuously supplying the depleted solute elements of Ga and As to the growth melt. The pseudo-binary InAs-GaAs melts were used as the growth melts. Compositionally graded <111B> InxGa1-xAs (0.05 less-than-or-equal-to x less-than-or-equal-to 0.08) crystals were used as seed crystals. The liquid encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material was used to grow the ternary bulk crystals. Polycrystalline GaAs was used as a source material. A 4 mm thick and uniform In0.14Ga0.86As single crystal was obtained.