ELECTROEPITAXIAL (PELTIER-INDUCED) LIQUID-PHASE EPITAXY, COMPOSITIONAL STABILIZATION AND X-RAY-ANALYSIS OF THICK (120 UM) IN1-XGAXP EPILAYERS ON (100) GAAS

被引：14

作者：

DANIELE, JJ ^{[1
]}

LEWIS, A ^{[1
]}

机构：

[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 06期

关键词：

D O I：

10.1007/BF02654972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1015 / 1031

页数：17

共 20 条

[1]

ARCHER RJ, 1972, J ELECTRON MATER, V1, P128

[2] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6849-6851

[3] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[4]

BARTELS WJ, 1978, MS10665 PHIL REP

[5] ELECTROEPITAXY OF MULTICOMPONENT SYSTEMS - TERNARY AND QUARTERNARY COMPOUNDS [J].

BRYSKIEWICZ, T ;

LAGOWSKI, J ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :988-996

[6] SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND CW LASER OPERATION (77 DEGREES K) OF IN1-XGAXP [J].

BURNHAM, RD ;

HOLONYAK, N ;

KEUNE, DL ;

SCIFRES, DR .

APPLIED PHYSICS LETTERS, 1971, 18 (04) :160-&

[7] CW GAAS-GAALAS DH LASERS GROWN BY PELTIER-INDUCED LPE [J].

DANIELE, JJ ;

CAMMACK, DA ;

ASBECK, PM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :914-916

[8] EXPERIMENTS SHOWING ABSENCE OF ELECTROMIGRATION OF AS AND AL IN PELTIER LPE OF GAAS AND GA1-XALXAS [J].

DANIELE, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1143-1144

[9] PELTIER-INDUCED LPE AND COMPOSITION STABILIZATION OF GAALAS [J].

DANIELE, JJ .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :373-375

[10] PELTIER-INDUCED LIQUID-PHASE EPITAXY AND COMPOSITIONAL CONTROL OF MM-THICK LAYERS OF (AL,GA)AS [J].

DANIELE, JJ ;

HEBLING, AJ .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4325-4327

← 1 2 →