PELTIER-INDUCED LPE AND COMPOSITION STABILIZATION OF GAALAS

被引：58

作者：

DANIELE, JJ ^{[1
]}

机构：

[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 07期

关键词：

D O I：

10.1063/1.88497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：373 / 375

页数：3

共 11 条

[1]

DANIELE JJ, 1974, 5TH P INT S GAAS REL, P155

[2]

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[4] CURRENT-CONTROLLED GROWTH AND DOPANT MODULATION IN LIQUID-PHASE EPITAXY [J].

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[5]

Lawrence D., COMMUNICATION

[6] STEADY-STATE LPE GROWTH OF GAAS [J].

LONG, SI ;

BALLANTY.JM ;

EASTMAN, LF .

JOURNAL OF CRYSTAL GROWTH, 1974, 26 (01) :13-20

[7] OPTICAL CHARACTERIZATION OF COMPOUND SEMICONDUCTOR ALLOYS [J].

ONTON, A ;

LORENZ, MR ;

WOODALL, JM ;

CHICOTKA, RJ .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :166-176

[8]

Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39

[9]

PFANN WG, 1957, J ELECTRONICS, V2, P597

[10] ISOTHERMAL DIFFUSION-THEORY OF LPE - GAAS, GAP, BUBBLE GARNET [J].

RODE, DL .

JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) :13-23

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