STEADY-STATE LPE GROWTH OF GAAS

[1] Benard H., 1900, Revue Generale des Sciences Pures et Appliquees, V11, P1309

[2] BENARD M, 1900, REV GEN SCI, V12, P1309

[3] CHAPMAN AJ, 1967, HEAT TRANSFER

[4] CHRISTENSSON S, 1970, IEEE T ELECTRON DEVI, VED17, P732

[5] A NEW MODE OF OPERATION FOR BULK NEGATIVE RESISTANCE OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1479 - +

[6] SOME OBSERVATIONS OF SURFACE MORPHOLOGIES OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) : 160 - 168

[7] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) : 157 - &

[8] HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 337 - +

[9] Levich VG., 1962, Physicochemical hydrodynamics

[10] LONG SI, 1969, RADCTR6942 ROM AIR D

[1] Benard H., 1900, Revue Generale des Sciences Pures et Appliquees, V11, P1309

[2] BENARD M, 1900, REV GEN SCI, V12, P1309

[3] CHAPMAN AJ, 1967, HEAT TRANSFER

[4] CHRISTENSSON S, 1970, IEEE T ELECTRON DEVI, VED17, P732

[5] A NEW MODE OF OPERATION FOR BULK NEGATIVE RESISTANCE OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1479 - +

[6] SOME OBSERVATIONS OF SURFACE MORPHOLOGIES OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) : 160 - 168

[7] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) : 157 - &

[8] HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 337 - +

[9] Levich VG., 1962, Physicochemical hydrodynamics

[10] LONG SI, 1969, RADCTR6942 ROM AIR D