OPTICAL CHARACTERIZATION OF COMPOUND SEMICONDUCTOR ALLOYS

被引:16
作者
ONTON, A
LORENZ, MR
WOODALL, JM
CHICOTKA, RJ
机构
[1] IBM CORP,RES LAB,SAN JOSE,CA 95193
[2] IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1016/0022-0248(74)90430-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:166 / 176
页数:11
相关论文
共 69 条
[1]   ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J].
ALIBERT, C ;
CHEVALLI.J ;
BORDURE, G ;
LAUGIER, A .
PHYSICAL REVIEW B, 1972, 6 (04) :1301-&
[2]   HIGH-RESOLUTION INTERBAND-ENERGY MEASUREMENTS FROM ELECTROREFLECTANCE SPECTRA [J].
ASPNES, DE ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1971, 27 (04) :188-&
[3]   RADIATIVE PROCESSES IN DIRECT AND INDIRECT BAND GAP IN1-XGAXP [J].
BACHRACH, RZ ;
HAKKI, BW .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5102-&
[4]  
BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P182
[5]   RAMAN AND INFRARED ACTIVE MODES OF ALUMINIUM PHOSPHIDE [J].
BEER, SZ ;
JACKOVITZ, JF ;
FELDMAN, DW ;
PARKER, JH .
PHYSICS LETTERS A, 1968, A 26 (07) :331-+
[6]   LIGHT-EMITTING DIODES [J].
BERGH, AA ;
DEAN, PJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02) :156-+
[7]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[8]   COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].
CASEY, HC ;
PANISH, MB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&
[9]   PHOTOLUMINESCENCE OF UNDOPED GAXIN1-XP ALLOYS [J].
CHEVALLIER, J ;
LAUGIER, A .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02) :437-+
[10]  
CHICOTKA RJ, PRIVATE COMMUNICATIO