BULK GAAS CRYSTAL-GROWTH BY LIQUID-PHASE ELECTROEPITAXY

被引：51

作者：

BRYSKIEWICZ, T

BOUCHER, CF

LAGOWSKI, J

GATOS, HC

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 03期

关键词：

D O I：

10.1016/0022-0248(87)90315-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：279 / 288

页数：10

共 19 条

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[9] THICKNESS UNIFORMITY OF GAAS LAYERS GROWN BY ELECTROEPITAXY [J].

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[10] LIQUID-PHASE ELECTROEPITAXY - GROWTH KINETICS [J].

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