DEFECT STRUCTURE AND ELECTRONIC CHARACTERISTICS OF GAAS-LAYERS GROWN BY ELECTROEPITAXY AND THERMAL LPE

被引：7

作者：

IMAMURA, Y ^{[1
]}

JASTRZEBSKI, L ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

defect; doping; semiconductor;

D O I：

10.1149/1.2129283

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A comparative study was carried out on the defect structure and electronic properties of GaAs layers grown under similar conditions by electroepitaxy (electromigration controlled) and by thermal LPE. It was found that the density of certain microdefects, commonly present in GaAs layers, is significantly smaller (about an order of magnitude) in electroepitaxially grown than in thermally grown layers. It was also found that electroepitaxial layers exhibit greater carrier mobility and diffusion length than the thermally grown layers; in addition, electroepitaxially grown p-n junctions exhibited lower saturation current than the thermally grown junctions. The differences in the characteristics of two types of layers are attributed to corresponding differences in the nature of the driving forces for growth. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1381 / 1385

页数：5

共 24 条

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ABDULFADL A, 1977, J CRYST GROWTH, V39, P341

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