SURFACE MORPHOLOGY OF GAAS LAYERS GROWN BY ELECTROEPITAXY AND THERMAL LPE

被引：15

作者：

IMAMURA, Y ^{[1
]}

JASTRZEBSKI, L ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 09期

关键词：

D O I：

10.1149/1.2131715

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1560 / 1561

页数：2

共 10 条

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[2]

JASTRZEBSKI L, UNPUBLISHED

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GATOS, HC .

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[4]

LAWRENCE DJ, 1976, J ELECTRON MATER, V6, P1

[5] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].

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HARRIS, JS ;

CHU, JC ;

GERTNER, ER .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) :107-&

[6]

MATTES BL, 1974, J CRYST GROWTH, V27, P133

[7] LIQUID-PHASE EPITAXIAL-GROWTH OF THIN GAAS LAYERS FROM SUPERCOOLED SOLUTIONS [J].

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TOYODA, N ;

HARA, T .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :131-133

[8] GROWTH OF UNIFORM SUBMICRON GAAS LAYERS BY LIQUID-PHASE EPITAXY [J].

MORKOC, H ;

EASTMAN, LF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :906-912

[9]

PETERS RC, 4TH P INT S GAAS REL, P55

[10] MEASUREMENTS OF PELTIER COOLING AT A GA-GAAS INTERFACE USING A LIQUID-PHASE EPITAXY SYSTEM [J].

STEFANAKOS, EK ;

ABULFADL, A ;

WORKMAN, MD .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :3002-3005

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