NEAR ROOM-TEMPERATURE CONTINUOUS-WAVE LASING CHARACTERISTICS OF GAINASP/INP SURFACE-EMITTING LASER

被引：85

作者：

BABA, T

YOGO, Y

SUZUKI, K

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Midori-ku, Yokohama 227

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first near room temperature continuous wave lasing operation of a GaInAsP/InP surface emitting laser has been achieved by employing a buried heterostructure and a novel MgO/Si heatsink mirror. A dramatic reduction of threshold current at room temperature and a circular narrow output beam were demonstrated.

引用

页码：913 / 914

页数：2

共 6 条

[1] THRESHOLD REDUCTION OF 1.3 MU-M GAINASP INP SURFACE-EMITTING LASER BY A MASKLESS CIRCULAR PLANAR BURIED HETEROSTRUCTURE REGROWTH
BABA, T
SUZUKI, K
YOGO, Y
IGA, K
KOYAMA, F
[J]. ELECTRONICS LETTERS, 1993, 29 (04) : 331 - 332
[2] BABA T, 1993, QUANTUM OPTOELECTRON
[3] KASUKAWA A, 1990, DEVICE RES C
[4] KUBOTA S, 1992, C LASERS ELECTROOPTI
[5] ROOM-TEMPERATURE PULSED OPERATION OF 1.5 MU-M GAINASP/INP VERTICAL-CAVITY SURFACE-EMITTING LASER
TADOKORO, T
OKAMOTO, H
KOHAMA, Y
KAWAKAMI, T
KUROKAWA, T
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) : 409 - 411
[6] LOW-THRESHOLD, HIGH-TEMPERATURE PULSED OPERATION OF INGAASP/INP VERTICAL CAVITY SURFACE EMITTING LASERS
WADA, H
BABIC, DI
CRAWFORD, DL
REYNOLDS, TE
DUDLEY, JJ
BOWERS, JE
HU, EL
MERZ, JL
MILLER, BI
KOREN, U
YOUNG, MG
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (11) : 977 - 979

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