THRESHOLD REDUCTION OF 1.3 MU-M GAINASP INP SURFACE-EMITTING LASER BY A MASKLESS CIRCULAR PLANAR BURIED HETEROSTRUCTURE REGROWTH

被引：7

作者：

BABA, T

SUZUKI, K

YOGO, Y

IGA, K

KOYAMA, F

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Yokohama, 227, 4259 Nagatsuta, Midori-ku

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A newly introduced maskless planar buried heterostructure regrowth has substantially improved the regrown heterointerface of a 1.3 mum GaInAsP/InP circular buried heterostructure surface emitting laser. The threshold current of the 12 mumphi device was reduced to 2.2mA at 77K under CW conditions.

引用

页码：331 / 332

页数：2

共 8 条

[1] BABA T, 1992, 4TH OPT C
[2] KASUKAWA A, 1990, 48TH DEV RES C
[3] KUBOTA S, 1992, 11TH C LAS EL
[4] MITO I, 1983, J LIGHTWAVE TECHNOL, V1, P195
[5] ROOM-TEMPERATURE PULSED OPERATION OF 1.5 MU-M GAINASP/INP VERTICAL-CAVITY SURFACE-EMITTING LASER
TADOKORO, T
OKAMOTO, H
KOHAMA, Y
KAWAKAMI, T
KUROKAWA, T
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) : 409 - 411
[6] TANOBE H, 1992, IEEE LEOS ANN M
[7] LOW-THRESHOLD, HIGH-TEMPERATURE PULSED OPERATION OF INGAASP/INP VERTICAL CAVITY SURFACE EMITTING LASERS
WADA, H
BABIC, DI
CRAWFORD, DL
REYNOLDS, TE
DUDLEY, JJ
BOWERS, JE
HU, EL
MERZ, JL
MILLER, BI
KOREN, U
YOUNG, MG
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (11) : 977 - 979
[8] AN OPTICAL-ABSORPTION PROPERTY OF HIGHLY BERYLLIUM-DOPED GAINASP GROWN BY CHEMICAL BEAM EPITAXY
YOKOUCHI, N
UCHIDA, T
MIYAMOTO, T
INABA, Y
KOYAMA, F
IGA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1255 - 1257

← 1 →