Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane

被引:18
作者
Leu, S
Protzmann, H
Höhnsdorf, F
Stolz, W [1 ]
Steinkirchner, J
Hufgard, E
机构
[1] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[2] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[3] Siemens AG, HL OCD MFH, D-93043 Regensburg, Germany
关键词
Si-doping; ditertiarybutyl silane; metalorganic vapour-phase epitaxy; III/V-semiconductors; GaAs Hall sensor device;
D O I
10.1016/S0022-0248(98)00592-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The liquid Si-compound ditertiarybutyl silane (DTBSi) has been investigated as a doping source for the metal organic vapour-phase epitaxy (MOVPE) of InP and GaAs using TBP or DTBP and TBAs as less hazardous group-V-sources. For both material systems the measured carrier concentration is directly proportional to the DTBSi/group-III-partial pressure ratio with a slope of unity. Uncompensated n-type InP as well as GaAs layers are achieved up to the 10(18) cm(-3) doping range. Additional calibrated SIMS-studies of InP layers show a coincidence of the Si-concentration in the InP layers with the measured net n-type carrier concentration within the experimental errors. With a reduction of the growth temperature from 610 degrees C to 570 degrees C a significant reduction of the Si-doping efficiency is observed. However, for temperature in excess of 610 degrees C up to 700 degrees C an almost constant doping efficiency for GaAs is obtained. For GaAs a slight reduction in Si-incorporation efficiency with increasing V/III-ratio is detected. The successful doping characteristics for GaAs have been applied to realize n-GaAs:Si Hall sensor device structures. The lateral homogeneity of the sheet resistance is evaluated as a function of the V/III-ratio and the substrate material. Under optimum conditions the normalized variance of the sheet resistance can be as low as 1%. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:91 / 97
页数:7
相关论文
共 12 条
[1]   DIFFERENCES IN SI DOPING EFFICIENCY IN TERTIARYBUTYLARSINE, MONOETHYLARSINE AND ARSINE FOR GAAS AND ALGAAS GROWN BY MOVPE [J].
KIKKAWA, T ;
TANAKA, H ;
KOMENO, J .
JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (03) :305-315
[2]   SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KUECH, TF ;
VEUHOFF, E ;
MEYERSON, BS .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :48-53
[3]   C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs [J].
Leu, S ;
Höhnsdorf, F ;
Stolz, W ;
Becker, R ;
Salzmann, A ;
Greiling, A .
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :98-104
[4]   CONTROLLED DOPING OF GAAS FILMS GROWN WITH TERTIARY-BUTYLARSINE [J].
LUM, RM ;
KLINGERT, JK ;
STEVIE, FA .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) :6507-6512
[5]  
PROTZMANN H, 1996, J ELECT MAT, V25
[6]  
PROTZMANN H, 1996, P 8 INT C INP REL MA
[7]   STUDY OF THE GAS-PHASE CHEMISTRY IN THE SILICON DOPING OF GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE AS THE GROUP-V SOURCE [J].
REDWING, JM ;
KUECH, TF ;
SAULYS, D ;
GAINES, DF .
JOURNAL OF CRYSTAL GROWTH, 1994, 135 (3-4) :423-433
[8]   GAAS P-I-N PHOTODIODES MADE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND ARSINE [J].
SERREZE, HB ;
BAUMANN, JA ;
BUNZ, L ;
SCHACHTER, R ;
ESMAN, RD .
APPLIED PHYSICS LETTERS, 1989, 55 (24) :2532-2534
[9]   SI-DOPING IN GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE AND TETRAETHYLSILANE [J].
TANABE, T ;
MATSUBARA, H ;
SAEGUSA, A ;
KIMURA, H ;
TAKAGISHI, S ;
SHIRAKAWA, T ;
TADA, K .
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :408-413
[10]   A STUDY OF SILICON INCORPORATION IN GAAS MOCVD LAYERS [J].
VEUHOFF, E ;
KUECH, TF ;
MEYERSON, BS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1958-1961