SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：87

作者：

KUECH, TF

VEUHOFF, E

MEYERSON, BS

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90396-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：48 / 53

页数：6

共 17 条

[1] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J].

BASS, SJ .

JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) :613-618

[2] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J].

BEERS, AM ;

BLOEM, J .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :153-155

[3] PYROLYSIS OF DISILANE AND RATE CONSTANTS OF SILENE INSERTION REACTIONS [J].

BOWREY, M ;

PURNELL, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 321 (1546) :341-&

[4] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].

DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[5] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J].

FARROW, RFC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :899-907

[6]

HOLLAN L, 1980, CURRENT TOPICS MATER, V5, P1

[7] DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY METALORGANICS METHOD [J].

KEIL, G ;

LEMETAYER, M ;

CUQUEL, A ;

LEPOLLOTEC, D .

REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (07) :405-413

[8] DISILANE - A NEW SILICON DOPING SOURCE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS [J].

KUECH, TF ;

MEYERSON, BS ;

VEUHOFF, E .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :986-988

[9] INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

KUNZEL, H ;

FISCHER, A ;

KNECHT, J ;

PLOOG, K .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (02) :69-78

[10] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

← 1 2 →