A STUDY OF SILICON INCORPORATION IN GAAS MOCVD LAYERS

被引：38

作者：

VEUHOFF, E

KUECH, TF

MEYERSON, BS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114261

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1958 / 1961

页数：4

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