GAAS P-I-N PHOTODIODES MADE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND ARSINE

被引：20

作者：

SERREZE, HB ^{[1
]}

BAUMANN, JA ^{[1
]}

BUNZ, L ^{[1
]}

SCHACHTER, R ^{[1
]}

ESMAN, RD ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期

关键词：

D O I：

10.1063/1.101973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2532 / 2534

页数：3

共 11 条

[1] OPTICAL-PROPERTIES OF ALXGA1-XAS [J].

ASPNES, DE ;

KELSO, SM ;

LOGAN, RA ;

BHAT, R .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767

[2] HIGH-SPEED GAAIAS/GAAS P-I-N PHOTO-DIODE ON A SEMI-INSULATING GAAS SUBSTRATE [J].

BARCHAIM, N ;

LAU, KY ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :261-262

[3] GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE [J].

BHAT, R ;

KOZA, MA ;

SKROMME, BJ .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1194-1196

[4] THE USE OF ORGANIC AS PRECURSORS IN THE LOW-PRESSURE MOCVD OF GAAS [J].

BRAUERS, A ;

KAYSER, O ;

KALL, R ;

HEINECKE, H ;

BALK, P ;

HOFMANN, H .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :7-14

[5] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH [J].

CHEN, CH ;

LARSEN, CA ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1987, 50 (04) :218-220

[6] THE FABRICATION AND ASSESSMENT OF HIGH-SPEED MOCVD GAALAS PIN DETECTORS [J].

ESDALE, DJ ;

WIGHT, DR ;

BALL, G ;

OLIVER, P .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :461-465

[7] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF HIGH-PURITY GAAS USING TERTIARYBUTYLARSINE [J].

HAACKE, G ;

WATKINS, SP ;

BURKHARD, H .

APPLIED PHYSICS LETTERS, 1989, 54 (20) :2029-2031

[8]

KAWANISHI S, 1989, IEEE J LIGHTWAVE TEC, V7, P92

[9]

LUM RM, 1989, 1989 EL MAT C CAMBR

[10]

MICHEL C, 1989, 4TH BIENN WORKSH ORG

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