THE USE OF ORGANIC AS PRECURSORS IN THE LOW-PRESSURE MOCVD OF GAAS

被引：70

作者：

BRAUERS, A ^{[1
]}

KAYSER, O ^{[1
]}

KALL, R ^{[1
]}

HEINECKE, H ^{[1
]}

BALK, P ^{[1
]}

HOFMANN, H ^{[1
]}

机构：

[1] PREUSSAG PURE MET GMBH,D-3394 LANGELSHEIM,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90498-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：7 / 14

页数：8

共 22 条

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[2] OMCVD GROWTH OF GAAS AND ALGAAS USING A SOLID AS SOURCE
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[3] GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1194 - 1196
[4] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 218 - 220
[5] MO-CVD GROWTH OF INGAAS USING ME3GA, ASME3, ASH3 AND ME3IN OR ET3IN AND ANALYSES OF ADDUCTS FORMED DURING THE GROWTH-PROCESS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (04) : 703 - 726
[6] GAAS FILMS GROWN BY VACUUM CHEMICAL EPITAXY USING THERMALLY PRECRACKED TRIMETHYL-ARSENIC
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) : 299 - 301
[7] HEINECKE H, 1984, J ELECTRON MATER, V13, P815, DOI 10.1007/BF02657928
[8] The deplacement of elements of the 5th group from their phenyl derivatives by hydrogen.
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Rasuwajew, G
[J]. BERICHTE DER DEUTSCHEN CHEMISCHEN GESELLSCHAFT, 1930, 63 : 1110 - 1114
[9] Kayser O., 1988, CHEMTRONICS, V3, P90
[10] REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES
KUECH, TF
POTEMSKI, R
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 821 - 823

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