Carbon nanotubes grown from nickel catalyst pretreated with H2/N2 plasma

被引:21
作者
Chang, Shang-Chou [1 ]
Lin, Tien-Chai [1 ]
Li, To-Sing [1 ]
Huang, Sheng-Han [1 ]
机构
[1] Kun Shan Univ, Dept Elect Engn, Tainan 71003, Hsien, Taiwan
关键词
Low temperature; Carbon nanotube; H-2/N-2; plasma;
D O I
10.1016/j.mejo.2008.02.025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
To find the possibility of using a low-temperature process in growing carbon nanotubes (CNTs), nickel catalyst converted from film into particles by microwave H-2/N-2 plasma and the following CNT growth are all kept at a low temperature of 250 degrees C. The flat panel display industry requests low-temperature rather than the traditional high-temperature process for CNT growth. It was found that H-2/N-2 proportion is very sensitive to nickel morphology and the subsequent CNT growth. Better nickel and CNTs morphology are obtained for the proportion H-2/N-2 = 3/1 than those for the generally used pure hydrogen environment. The process pressure selection during pretreatment can determine whether CNTs are grown or not. The diameter of growing CNTs is proportional to nickel particle size. Field emission results support field amplification coefficient claim. The long tube length and high tube density of growing CNTs demonstrate low threshold electric field. This work shows the potential to use H-2/N-2 instead of pure hydrogen plasma in growing qualified CNTs applied in display industry. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1572 / 1575
页数:4
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